发明名称 METHOD OF MANUFACTURING FUNCTIONAL FILM AND METHOD OF MANUFACTURING THIN-FILM TRANSISTOR
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a functional film which can sufficiently secure desired film characteristics such as a high planarity of the film surface and a high denseness of the film regardless of the baking temperature, that is, even if the baking temperature is set low. SOLUTION: The method of manufacturing the functional film comprises a process of placing, on a substrate P, a first ink containing a metal or metal oxide material which has a melting point of 900°C or above, and has a melting point of 55°C when the grain diameter is 30-150 nm as a solute; and a process of placing a second ink X2 containing metal organic salt as a solute on the first ink. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006108146(A) 申请公布日期 2006.04.20
申请号 JP20040288694 申请日期 2004.09.30
申请人 SEIKO EPSON CORP 发明人 DENDA ATSUSHI
分类号 H01L21/3205;B05D1/36;B05D7/24;H01L21/288;H01L21/336;H01L29/786 主分类号 H01L21/3205
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