| 摘要 |
PROBLEM TO BE SOLVED: To form an SOI structure and a bulk structure on the same substrate without using an SOI substrate. SOLUTION: A method of manufacturing a semiconductor substrate includes the steps of sequentially selectively forming a first semiconductor layer 5 and a second semiconductor layer 6 on an SOI forming region E1 on the semiconductor substrate 1, forming an anti-oxidation film 8 on an SOI forming region R1 and a bulk region R2 as the second semiconductor layer 6 is covered, forming an opening 9 in which the part of the end of the first semiconductor layer 5 is exposed in the anti-oxidation film 8 and a sacrificial oxide film 7, etching removing the first semiconductor substrate 5 by bringing etching gas or etching liquid into contact with the first semiconductor layer 5 through the opening 9, and forming an oxide film 11 in a cavity part 10 between the semiconductor substrate 1 and the second semiconductor layer 6 by performing the thermal oxidation of the semiconductor substrate 1 and the second semiconductor layer 6. COPYRIGHT: (C)2006,JPO&NCIPI
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