发明名称 |
High performance field effect transistors comprising carbon nanotubes fabricated using solution based processing |
摘要 |
The present invention is directed toward field effect transistors (FETs) and thin film transistors (TFTs) comprising carbon nanotubes (CNTs) and to methods of making such devices using solution-based processing techniques, wherein the CNTs within such devices have been fractionated so as to be concentrated in semiconducting CNTs. Additionally, the relatively low-temperature solution-based processing achievable with the methods of the present invention permit the use of plastics in the fabricated devices.
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申请公布号 |
US2006081882(A1) |
申请公布日期 |
2006.04.20 |
申请号 |
US20040966793 |
申请日期 |
2004.10.15 |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
MALENFANT PATRICK ROLAND L.;LEE JI-UNG;LI YUN;CICHA WALTER V. |
分类号 |
H01L21/82;B05B5/053;H01L27/10;H01L29/76 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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