发明名称 |
Semiconductor channel on insulator structure |
摘要 |
A method including forming a via dielectric layer on a semiconductor device substrate; forming a trench dielectric layer on the via dielectric layer; forming a trench through the trench dielectric layer to expose the via dielectric layer; forming a via in the via dielectric layer through the trench to expose the substrate; and forming a semiconductor material in the via and in the trench. An apparatus including a device substrate; a dielectric layer formed on a surface of the device substrate; and a device base formed on the dielectric layer including a crystalline structure derived from the device substrate.
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申请公布号 |
US2006081932(A1) |
申请公布日期 |
2006.04.20 |
申请号 |
US20050292911 |
申请日期 |
2005.12.01 |
申请人 |
JIN BEEN-YIH;DOYLE BRIAN S;HARELAND SCOTT A;DOCZY MARK L;METZ MATTHEW V;BOYANOV BOYAN I;DATTA SUMAN;KAVALIEROS JACK T;CHAU ROBERT S |
发明人 |
JIN BEEN-YIH;DOYLE BRIAN S.;HARELAND SCOTT A.;DOCZY MARK L.;METZ MATTHEW V.;BOYANOV BOYAN I.;DATTA SUMAN;KAVALIEROS JACK T.;CHAU ROBERT S. |
分类号 |
H01L27/12;H01L21/20;H01L21/336;H01L21/768;H01L27/01;H01L29/786;H01L31/0392 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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