| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing the short-channel effect, while suppressing the deterioration caused by the junction leakage of MOSFETs, and to provide a manufacturing method thereof. <P>SOLUTION: A trench capacitor TC and a transfer transistor serve as components of each of trench cells in a DRAM array region in a DRAM/Logic-mixed mounted device or a DRAM device. Impurity ions of the same conduction type as that of a semiconductor substrate 10 are implanted to a region below the drain region 21 of the transfer transistor to form a pocket implantation region 23 with a high concentration. No pocket implantation region is to be formed to a region under the source region 22 of the transfer transistor. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
