| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a p-type Ga<SB>2</SB>O<SB>3</SB>film and a manufacturing method of a pn junction Ga<SB>2</SB>O<SB>3</SB>film capable of forming a thin film comprising high quality Ga<SB>2</SB>O<SB>3</SB>-based compound semiconductor. <P>SOLUTION: A vacuum layer 52 is reduced in pressure, and a cell 55a is heated while injecting oxygen radical and a Ga molecular beam 90 and a cell 55b are heated, and further an Mg molecular beam 90 is irradiated onto a substrate 25 comprising a Ga<SB>2</SB>O<SB>3</SB>-based compound to grow a p-type β-Ga<SB>2</SB>O<SB>3</SB>layer comprising p-type β-Ga<SB>2</SB>O<SB>3</SB>on the substrate 25. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
