发明名称 |
GROUP III NITRIDE POLYCRYSTAL, METHOD FOR PRODUCING THE SAME, GROUP III NITRIDE SINGLE CRYSTAL, AND METHOD FOR PRODUCING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a group III nitride polycrystal in which the concentration of oxygen atoms is low; a group III nitride single crystal; and methods for producing them. SOLUTION: The method for producing the group III nitride polycrystal comprises synthesizing the group III nitride polycrystal 1 in which the concentration of oxygen atoms is≤100 ppm by reacting a halide of a group III element and NH<SB>3</SB>. The method for producing the group III nitride single crystal comprises growing the group III nitride single crystal by a sublimation method using the group III nitride polycrystal as a raw material. The group III nitride polycrystal and the group III nitride single crystal obtained by respective methods are also provided. COPYRIGHT: (C)2006,JPO&NCIPI
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申请公布号 |
JP2006103998(A) |
申请公布日期 |
2006.04.20 |
申请号 |
JP20040290591 |
申请日期 |
2004.10.01 |
申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
FUJIWARA SHINSUKE;KAMIMURA TOMOYOSHI;MIYANAGA TOMOMASA |
分类号 |
C01B21/072;C01B21/06;C30B29/38 |
主分类号 |
C01B21/072 |
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