Semiconductor laser

摘要

A semiconductor laser in which six layers are grown on one another, over an Si-GaAs substrate, in the following order: an Si-GaAs buffer layer, an Si-AlGaInP cladding layer, an active layer, an Mg-AlGaInP cladding layer, an Mg-AlGaInP band discontinuity reduction layer, and a Zn-GaAs contact layer. In this configuration, the carrier concentration of the Si-GaAs substrate may be from 1x10¹⁷ cm^-3 to 7x10¹⁷ cm^-3 to reduce the number of atoms diffusing from the Si-GaAs substrate into the active layer and so the active layer of the semiconductor laser has good light emission characteristics.