发明名称 NITROGEN DIOXIDE INDICATOR
摘要 FIELD: gas analysis, in particular, detecting devices used for registration and measurement of content of micro-admixtures of nitrogen and other gases. ^ SUBSTANCE: in the sensor, containing semiconductor base and substrate, semiconductor base is made of polycrystalline film of cadmium telluride, alloyed with indium antimonide, and as substrate, electrode platform of piezo-quartz resonator is utilized. ^ EFFECT: increased sensitivity and manufacturability of sensor manufacture, expanded functional capabilities of sensor. ^ 3 dwg
申请公布号 RU2274853(C1) 申请公布日期 2006.04.20
申请号 RU20040121265 申请日期 2004.07.12
申请人 发明人 KIROVSKAJA IRAIDA ALEKSEEVNA;FEDJAEVA OKSANA ANATOL'EVNA;MIRONOVA ELENA VALER'EVNA
分类号 G01N27/12 主分类号 G01N27/12
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