COMMON SOURCE LINE CONTROL SCHEME OF NONVOLATILE MEMORY DEVICE FOR IMPROVING READ CHARACTERISTIC

摘要

PROBLEM TO BE SOLVED: To provide a common source line control scheme of a nonvolatile memory device for improving read characteristic.

SOLUTION: The nonvolatile memory device demonstrated here includes memory blocks each of which has a plurality of word lines. A common source line is arranged to be shared by the memory blocks. A first transistor is connected to the common source line, A second transistor connects the first transistor to reference voltage during read operation.Voltage higher than power supply voltage is applied to a gate of the first transistor during the read operation.

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