| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method and a semiconductor device which is capable for forming low resistance gate electrode wiring. SOLUTION: The semiconductor device manufacturing method comprises the processes of: forming a polysilicon layer to the predetermined region on a semiconductor substrate; forming a first insulating film to expose at least a part of the polysilicon layer and side wall; forming a first metal film at least on the exposed polysilicon layer and siliciding at least a part of the polysilicon layer; forming a second insulating film to expose the upper surface of the polysilicon layer and the predetermined region of the semiconductor substrate after removing the first insulating film; and forming a second metal film on at least the exposed polysilicon layer and semiconductor substrate and siliciding at least a part of the polysilicon layer and semiconductor substrate. COPYRIGHT: (C)2006,JPO&NCIPI
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