发明名称 CHARGED PARTICLE BEAM LITHOGRAPHY DEVICE AND LITHOGRAPHY METHOD
摘要 PROBLEM TO BE SOLVED: To efficiently suppress-dimensional fluctuations caused by resist heating without waste and maintaining high accuracy and high throughput. SOLUTION: The charged particle beam lithography device is provided with a deflector 14 for varying beam dimension, which forms a variable-forming beam, by controlling the shape and the dimension of a charged beam emitted from a charged beam source 6, a pattern data decoder 23 for dividing a pattern to be drawn on the resist on a sample 2 into a plurality of shot figures which can be formed with the deflector 14 for varying a beam dimension, an area recognizing unit 30 for detecting an area for each shot figure, and a drawing data corrector 31 which reconstructs each shot figure so that the area to be detected for each shot figure approximates the preset maximum area. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006108447(A) 申请公布日期 2006.04.20
申请号 JP20040294049 申请日期 2004.10.06
申请人 TOSHIBA CORP;TOSHIBA MACH CO LTD 发明人 YASUSE HIROTO;IWASAKI SEIJI;TAKAHASHI MASAZUMI;MIURA MANABU
分类号 H01L21/027;G03F7/20 主分类号 H01L21/027
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