发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To easily detect faults other than a leakage current occurring in the short-channel effect in a probe test. SOLUTION: In a standby test before a screening test, a consumption current is measured at each test point, and when the consumption current value exceeds a first consumption current threshold, the semiconductor device is regarded as faulty. As a result of judgment whether the measured consumption current value is within the criterion limits or not, the semiconductor device outside the limits is regarded as faulty. In a standby test after the screening test, as a result of the calculation of the difference between the consumption current measured at each test point and the consumption current measured before the screening test, the semiconductor device of which the difference exceeds a second consumption current threshold is regarded as faulty. Thereafter, as a result of judgment whether the consumption current value measured after the screening test is less than the first consumption current threshold or not, the semiconductor device with a larger consumption current value is regarded as faulty. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006105841(A) 申请公布日期 2006.04.20
申请号 JP20040294456 申请日期 2004.10.07
申请人 RENESAS TECHNOLOGY CORP 发明人 ASAI TAKANORI
分类号 G01R31/319;G01R31/26;H01L21/66 主分类号 G01R31/319
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