发明名称 |
Polishing slurries for copper and associated materials |
摘要 |
A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that includes a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries can include silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.
|
申请公布号 |
US2006084272(A1) |
申请公布日期 |
2006.04.20 |
申请号 |
US20050145807 |
申请日期 |
2005.06.06 |
申请人 |
WOJTCZAK WILLIAM A;BAUM THOMAS H;NGUYEN LONG;REGULSKI CARY |
发明人 |
WOJTCZAK WILLIAM A.;BAUM THOMAS H.;NGUYEN LONG;REGULSKI CARY |
分类号 |
H01L21/461;C09C1/68;C09G1/02;H01L21/321 |
主分类号 |
H01L21/461 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|