| 摘要 |
A semiconductor device in which penetration of a metal silicide film in a source/drain layer as well as generation of the leakage current is suppressed. A semiconductor device includes a gate 6 , formed only of a metal silicide, and a metal silicide layer 10, formed on a source/drain layer 9. The metal silicide layer is thinner in the thickness than the gate 6 and contains a silicidation suppressing component for suppressing the silicidation of the silicon substrate 2.
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