| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing composition at a low cost in which metallic impurities such as Cu, Mn, Ni, Fe, Zn, and Cr do not substantially present on colloidal silica particle surfaces and in a dispersion medium and which is most suitable for polishing a silicon wafer or the like, and to provide a method for polishing a silicon wafer using the polishing composition. <P>SOLUTION: The polishing composition contains 10 ppb or less of Cu, 20 ppb or less of Ni and 20 ppb or less of Zn as metallic impurities present on colloidal silica particle surfaces and in a dispersion medium. The polishing composition is produced by a method comprising the step of bringing an activated silicic acid aqueous solution or a colloidal silica into contact with a chelating agent having a nitrogen atom or a phosphorus atom followed by bringing the activated silicic acid aqueous solution or the colloidal silica into contact with an anion exchanger. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
