| 摘要 |
PROBLEM TO BE SOLVED: To form a thin film transistor with excellent characteristics and with desired characteristics by performing a crystallization step by the use of a capping layer pattern containing a metal catalyst whose concentration and distribution vary depending on its thickness, controlling the density and position of a seed formed on an interface between an amorphous silicon layer and the capping layer pattern, improving sizes and the uniformity of crystal grains, and selectively forming polycrystalline silicon with a desired size and uniformity on a desired position by a single crystallization step. SOLUTION: A substrate and the capping layer pattern formed on the substrate are used with the metal catalyst included in a predetermined distribution and having a predetermined height and width. The amorphous silicon layer under the capping layer is crystallized into a polycrystalline silicon layer. A manufacturing method is thus provided for the thin film transistor composed of a plurality of semiconductor layers with different crystal grains, a gate insulation film formed on the semiconductor layers, a gate electrode, an interlayer insulation film, and a source/drain electrode. COPYRIGHT: (C)2006,JPO&NCIPI |
