| 摘要 |
<p>An infrared detector (10) comprising a first semiconductor layer (12), a first insulation layer (14) layered on the first semiconductor layer, a second semiconductor layer (16) layered on the first insulation layer and formed with a hollow portion (18) penetrating along the layered direction, an insulation film (20) formed on the inner wall surface (18a) of the hollow portion, and a second insulation layer (22) layered on the second semiconductor layer, for supporting an infrared detection unit so as to face the hollow portion in a layered direction. Since the shape and size of the hollow portion are positively defined by the first insulation layer and the insulation film, the infrared detection unit disposed to face the hollow portion is used to obtain a uniform detection sensitivity on a multiple-element basis and obtain a uniform detection sensitivity among elements in the same lot on a single-element basis. Therefore, the infrared detector and its production method can be realized that can obtain a uniform detection sensitivity on a multiple-element basis and a uniform detection sensitivity among elements in the same lot on a single-element basis.</p> |
