| 摘要 |
FIELD: semiconductor engineering. ^ SUBSTANCE: new gaseous-discharge conditions are proposed, as follow: En/N = U/Delta.N, where En is characteristic value of electric field intensity in near-electrode area of gas with slow electrons; N is concentration of gas mixture neutral particles in electric field area under discussion; U is potential of high-voltage electrode relative to ground or to other nearest electrode; Delta is size along direction of intermediate electric field of high-voltage potential space-time localizing area. Runaway electrons whose energy amounts to hundreds of keV and currents, to hundreds of kA in corona and space discharges, as well as discharges over dielectric surface and their combination are more efficiently generated under such conditions. Fast electrons can be generated in single-electrode corona discharge and fast electron beams are efficiently generated in dense-gas space discharges combined with surface discharge or discharges in dielectric tubes; power density of X-ray, ultraviolet, and violet radiation from discharge is effectively controlled, ozone and/or other chemically active or excited molecules in dense gases can be obtained in discharge with runaway electrons. ^ EFFECT: enlarged functional capabilities, enhanced amplitude of beam current both in electrode-to-electrode gap and in past-anode space. ^ 16 cl, 15 dwg |
