| 摘要 |
PROBLEM TO BE SOLVED: To provide the insulating film forming method of a semiconductor device which can improve the reliability of process and the electrical characteristics of element, by minimizing defect generation in the front surface of the insulating film, and by suppressing failures or the like, where a pattern formed on its upper portion becomes thin, or is cut. SOLUTION: The method comprises a stage of forming an interlayer insulating film 402 on a semiconductor substrate top 401, and a stage of processing heat treatment for removing outgassing sources contained in the interlayer insulating film 402. COPYRIGHT: (C)2006,JPO&NCIPI
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