| 发明名称 |
Ferroelectric film, ferroelectric capacitor, ferroelectric memory, piezoelectric element, semiconductor element, method of manufacturing ferroelectric film, and method of manufacturing ferroelectric capacitor |
| 摘要 |
A ferroelectric film is formed by an oxide that is described by a general formula AB<SUB>1-x</SUB>Nb<SUB>x</SUB>O<SUB>3</SUB>. An A element includes at least Pb, and a B element includes at least one of Zr, Ti, V, W, Hf and Ta. The ferroelectric film includes Nb within the range of: 0.05<=x<1. The ferroelectric film can be used for any of ferroelectric memories of 1T1C, 2T2C and simple matrix types.
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| 申请公布号 |
US2006083933(A1) |
申请公布日期 |
2006.04.20 |
| 申请号 |
US20050286286 |
申请日期 |
2005.11.25 |
| 申请人 |
SEIKO EPSON CORPORATION |
发明人 |
KIJIMA TAKESHI;HAMADA YASUAKI;NATORI EIJI;OHASHI KOJI |
| 分类号 |
C04B35/49;G11C11/22;B05C5/00;B32B9/00;B32B15/04;B32B17/06;B32B19/00;B41J2/045;B41J2/055;B41J2/16;C01G25/02;C01G33/00;C01G35/00;H01B1/08;H01B3/12;H01G4/12;H01G4/33;H01L21/02;H01L21/314;H01L21/316;H01L21/77;H01L21/8246;H01L21/84;H01L27/10;H01L27/105;H01L27/115;H01L41/08;H01L41/09;H01L41/18;H01L41/187;H01L41/22;H01L41/24;H02N2/00 |
主分类号 |
C04B35/49 |
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