发明名称 |
Electrostatic discharge protection device with complementary dual drain implant |
摘要 |
Off-chip driver (OCD) NMOS transistors with ESD protection are formed by interposing an P-ESD implant between the N+ drain regions of OCD NMOS transistors and the N-well such that the P-ESD surrounds a section of the N-well. The P-ESD implant is dosed less than the N+ source/drain implants but higher than the N-well dose. In another embodiment, N-well doping is used along with P-ESD doping, where the P-ESD doping is chosen such that it counterdopes the N-well underneath the N+ drains. The N-well, however, still maintains electrical connection to the N+ drains. This procedure creates a larger surface under the area where the junction breakdown occurs and an increased radius of curvature of the junction. The P-ESD implant is covered by N-type on three sides creating better parasitic bipolar transistor characteristics.
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申请公布号 |
US2006081933(A1) |
申请公布日期 |
2006.04.20 |
申请号 |
US20050291757 |
申请日期 |
2005.12.01 |
申请人 |
AGILENT TECHNOLOGIES, INC. |
发明人 |
MANNA INDRAJIT;LO KENG F.;TAN PEE Y.;CHENG MICHAEL |
分类号 |
H01L23/62;H01L27/02;H01L29/08;H01L29/10;H01L29/78 |
主分类号 |
H01L23/62 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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