发明名称 |
Dielectric multilayer of microelectronic device and method of fabricating the same |
摘要 |
A dielectric multilayer suitable for improving a performance of a microelectronic device and a method of fabricating the dielectric multilayer are provided. The dielectric multilayer of the microelectronic device comprises a composite layer which is formed of oxides of two or more different elements and in which a laminar structure is not formed, and a single layer which is formed on at least one surface of the composite layer and is formed of an oxide of a single element.
|
申请公布号 |
US2006081905(A1) |
申请公布日期 |
2006.04.20 |
申请号 |
US20050233335 |
申请日期 |
2005.09.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
WON SEOK-JUN;KWON DAE-JIN;LEE JONG-HO |
分类号 |
H01L29/94 |
主分类号 |
H01L29/94 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|