发明名称 |
Solid-state imaging device |
摘要 |
Each of the unit cells provided on a semiconductor substrate of a solid-state imaging device comprises a first p-type well which isolates the semiconductor substrate into an n-type photoelectric conversion region, a second p-type well which is formed in the surface of the photoelectric conversion region and in which a signal scanning circuit section is formed, and a signal storage section which is comprised of a highly doped n-type layer which is formed in the surface of the photoelectric conversion region apart from the second p-type well and higher in impurity concentration than the photoelectric conversion region. The signal storage section having its part placed under a signal readout gate adapted to transfer a packet of signal charge from the storage section to the signal scanning circuit section and its part at which the potential becomes deepest located under the readout gate.
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申请公布号 |
US2006082669(A1) |
申请公布日期 |
2006.04.20 |
申请号 |
US20050251882 |
申请日期 |
2005.10.18 |
申请人 |
INOUE IKUKO;YAMASHITA HIROFUMI;TANAKA NAGATAKA;IHARA HISANORI;YAMAGUCHI TETSUYA;GOTO HIROSHIGE |
发明人 |
INOUE IKUKO;YAMASHITA HIROFUMI;TANAKA NAGATAKA;IHARA HISANORI;YAMAGUCHI TETSUYA;GOTO HIROSHIGE |
分类号 |
H01L27/146;H04N5/335;H04N5/357;H04N5/369;H04N5/374 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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