| 摘要 |
A magnetic random access memory (MRAM) device may include a magnetic tunnel junction structure between first and second electrodes. Methods of operating such as MRAM device may include providing a write current through the first electrode, through the magnetic tunnel junction structure, and through the second electrode. An auxiliary switching magnetic field may be generated by the write current through the first electrode, and a portion of the auxiliary switching magnetic field may pass through the magnetic tunnel junction structure in a direction perpendicular to a direction of the write current through the magnetic tunnel junction structure. Moreover, a magnitude of the write current and/or the auxiliary switching magnetic field may be sufficient to change a program state of the magnetic tunnel junction structure. Related devices and structures are also discussed.
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