发明名称 STATIC CAPACITANCE SENSOR AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a static capacitance sensor at a low cost with enhanced sensing sensitivity. SOLUTION: A silicon microphone element 20 includes a silicon support substrate 21, a silicon oxide layer 22 formed on the silicon support substrate 21, a moving electrode plate 23 formed on the silicon oxide layer 22, a back plate 25 supported by a support provided on the silicon support substrate 21, a first electrode 26 provided to the moving electrode plate 23, and a second electrode 27 provided to the back plate 25. The moving electrode plate 23 includes a diaphragm 23a arranged opposite to the back plate 25 via a sacrificing layer 24 and vibrated in response to the strength of a sound wave. The support includes the silicon oxide layer 22, a polishing stopper 36, and the sacrificing layer 24. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006108491(A) 申请公布日期 2006.04.20
申请号 JP20040294923 申请日期 2004.10.07
申请人 NIPPON HOSO KYOKAI <NHK> 发明人 IGUCHI YOSHINORI;GOTO MASAHIDE;TAJIMA TOSHIFUMI
分类号 H01L29/84;G01L1/14;G01P15/125;H04R19/04;H04R31/00 主分类号 H01L29/84
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