| 摘要 |
PROBLEM TO BE SOLVED: To provide an internal voltage supply circuit which can control an internal voltage to be used as a source voltage of an input/output sense amplifier or the like by reflecting differences in current drive capability among semiconductor devices based on wafer manufacturing process conditions, consequently improves electrical characteristics of the semiconductor devices and reduces unnecessary current consumption thereof, thereby increasing energy efficiencies of the semiconductor devices. SOLUTION: The internal voltage supply circuit includes: a first voltage driver N100 for supplying a first voltage Vpp in response to a first enable signal SAP1; a second voltage driver N200 for supplying a second voltage Vcore in response to a second enable signal SAP2, and a first enable signal generator 200 for supplying the first enable signal SAP1 having an enable section of a prescribed time according to a current drive capability of a semiconductor device. The enable section is set to be relatively shorter than a predetermined reference width when the current drive capability of the semiconductor device is higher than a predetermined reference current drive capability, and the enable section is set to be relatively longer than the reference width when the current drive capability of the semiconductor device is lower than the reference current drive capability. COPYRIGHT: (C)2006,JPO&NCIPI
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