发明名称 |
Light emitting device using nitride semiconductor and fabrication method of the same |
摘要 |
A nitride based 3-5 group compound semiconductor light emitting device comprising: a substrate; a buffer layer formed above the substrate; a first In-doped GaN layer formed above the buffer layer; an In<SUB>x</SUB>Ga<SUB>1-x</SUB>N/In<SUB>y</SUB>Ga<SUB>1-y</SUB>N super lattice structure layer formed above the first In-doped GaN layer; a first electrode contact layer formed above the In<SUB>x</SUB>Ga<SUB>1-x</SUB>N/In<SUB>y</SUB>Ga<SUB>1-y</SUB>N super lattice structure layer; an active layer formed above the first electrode contact layer and functioning to emit light; a second In-doped GaN layer; a GaN layer formed above the second In-doped GaN layer; and a second electrode contact layer formed above the GaN layer. The present invention can reduce crystal defects of the nitride based 3-5 group compound semiconductor light emitting device and improve the crystallinity of a GaN GaN based single crystal layer in order to improve the performance of the light emitting device and ensure the reliability thereof.
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申请公布号 |
US2006081831(A1) |
申请公布日期 |
2006.04.20 |
申请号 |
US20050288310 |
申请日期 |
2005.11.29 |
申请人 |
LEE SUK H |
发明人 |
LEE SUK H. |
分类号 |
H01L29/06;H01L33/06;H01L33/12;H01L33/32 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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