| 摘要 |
<p>A semiconductor device capable of satisfying both low power consumption of a booster circuit being used for operating an on-chip circuit constituted of an MOS transistor exhibiting a higher breakdown voltage for external power supply voltage and guarantee of boosting operation rate and stabilization of boosted voltage. The semiconductor device comprises an external interface circuit (2) having a first region of a specific breakdown voltage and a second region of a breakdown voltage lower than that of the first region wherein a first voltage supplied from the outside is used as an operation power supply voltage, a booster circuit (10) for producing a second voltage by boosting the first voltage, and a processing circuit (9) using the first voltage and the second voltage as the operation power supply voltage. The booster circuit performs boosting operation at a first rate when the processing circuit is operated and performs preboosting operation at a second rate lower than the first rate before the processing circuit is operated.</p> |
