| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a reflection electrode and compound semiconductor LED equipped with it. <P>SOLUTION: This reflection electrode (22) of the compound semiconductor LED comprises electrodes, formed on a p-type compound semiconductor layer (20) of the compound semiconductor LED. The electrodes include a first electrode layer (22a), consisting of any one of Ag and Ag system alloy that forms an ohmic contact with the p-type compound semiconductor layer (20), a third electrode layer (22c) formed on the first electrode layer (22a), consisting of any one chosen from among a group of Ni, Ni-based alloy, Zn, Zn-based alloy, Cu, Cu-based alloy, Ru, Ir, and Rh, and a fourth electrode layer (22d) formed on the third electrode layer (22c) formed by a light-reflecting substance. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
