| 摘要 |
<P>PROBLEM TO BE SOLVED: To optimize a manufacture condition of a multilayer laminated structure of a group III nitride compound semiconductor light emitting element, and to improve the emission efficiency of the light emitting element. <P>SOLUTION: The method manufactures the III-group nitride compound semiconductor light emitting element having the multilayer laminated structure where a first layer formed of In<SB>x</SB>Al<SB>y</SB>Ga<SB>1-(x+y)</SB>N (0<x≤1, 0≤y≤1 and 0<(x+y)≤1) and a second layer formed of Al<SB>a</SB>Ga<SB>1-a</SB>N (0≤a≤1) are repetitively laminated. When the second layer is formed on the first layer by an MOCVD method, the growth of the second layer is substantially started at a growing temperature of the first layer. The growing temperature is raised, the second layer is gown up on the first layer by a prescribed thickness and hydrogen gas is mixed into carrier gas. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
