| 摘要 |
PROBLEM TO BE SOLVED: To provide a wiring structure of a solid-state imaging element which can realize miniaturization, high sensitivity, and high reliability, in particular, a contact structure thereof. SOLUTION: A solid-state imaging element comprises a photoelectric conversion section on the surface of a silicon substrate, an electric charge transfer having a charge transfer electrode for transferring an electric charge generated in the photoelectric conversion section, and a wiring having a wiring layer connected to the silicon substrate. In the imaging element, interconnections among the wiring layer and the silicon substrate are made by a silicon-based conductive film, disposed so as to extend from a direct contact region formed on the surface of the silicon substrate and reach wiring contacts formed in part of the insulating film covering the wiring layer. COPYRIGHT: (C)2006,JPO&NCIPI
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