| 摘要 |
PROBLEM TO BE SOLVED: To provide a method by which an AlGaInP system semiconductor layer and the other semiconductor layers can be respectively etched at relatively close etching speed by using an easily handleable etchant, and also, a smooth surface can be obtained after etching. SOLUTION: The AlGaInP system semiconductor layer and the other semiconductor layers are etched by using the etchant made of an acid solution including a halogen oxygen acid ion. COPYRIGHT: (C)2006,JPO&NCIPI
|
