| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which can form an insulator layer stably between a conductive material layer such as penetrating wiring, etc. which penetrates a substrate and the substrate and makes the thickness of the conductive material layer uniform and can stably form the penetrating wiring. SOLUTION: A cylindrical hole 25 for charging an insulator extended from one surface 21 side of a semiconductor substrate 11 in the semiconductor substrate 11 in the thickness direction of the semiconductor substrate 11 is formed in the semiconductor substrate 11, and a columnar object 26 made of the remaining semiconductor substrate 11 is formed inward of the cylindrical hole 25 for charging the insulator. After the insulating material is charged in the formed hole 25 for charging the insulator and the cylindrical insulator layer 27 is formed, the columnar object 26 is removed and the a hole 29 for charging the columnar conductive material is formed inward of the insulator layer 27. The conductive material is filled in the formed hole 29 for charging the conductive material, and a conductive material layer 30 surrounded by the insulator layer 27 is formed. Thereby, the insulator layer 27 can be stably formed between the conductive material layer 30 and the semiconductor substrate 11. Further, the thickness of the conductive material layer 30 can be made uniform. COPYRIGHT: (C)2006,JPO&NCIPI
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