| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging device in which the reduction of dark current at a vertical transfer is compatible with the assurance of handled charge amount. SOLUTION: The solid-state imaging device comprises photodiodes which are arrayed in plural numbers in second dimension and accumulate signal charges that have been photoelectrically converted, a vertical transfer comprising a vertical transfer electrode which receives signal charges accumulated in the photodiodes and transfers them in vertical direction, a horizontal transfer which receives signal charges from the vertical transfer and transfers them in horizontal direction, and an output part which receives signal charges from the horizontal transfer and converts them into output signal. By applying vertical transfer pulses of M-phase (M is natural number of 2 or higher) to the vertical transfer electrode, the number of electrodes that accumulate signal charges among the vertical transfer electrodes in the period of vertical transfer is less than the number of electrodes that accumulate signal charges among the vertical transfer electrodes in the period of horizontal transfer within the same field period. COPYRIGHT: (C)2006,JPO&NCIPI |
