| 摘要 |
A semiconductor device comprises a semiconductor substrate, diffusion layer regions formed in the semiconductor substrate, a gate insulating film formed on the semiconductor substrate, gate electrodes formed on the gate insulating film, a silicon nitride film covering the gate electrodes, an interlayer insulating film formed over the semiconductor substrate so as to cover at least a portion of the silicon nitride film on the gate electrodes, and contact plugs formed in the interlayer insulating film and each connected to the diffusion layer region. The contact plugs extend in a width direction of the gate electrodes at predetermined intervals so as to form stripes. These stripes are divided by the gate electrodes.
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