Poly-silicon stringer fuse

摘要

A polysilicon silicide stringer fuse is constructed having a narrow width by using an overlay tolerance of the photo stepper tool instead of the minimum critical dimension tolerance of the stepper tool. In an example embodiment, a fuse ( 200 ) for integration within a semiconductor comprises depositing an insulating layer ( 205 ) adjacent to the semiconductor substrate ( 203 ). A silicon layer ( 201 ) is formed with a first silicon material having a first resistance deposited adjacent the insulating layer ( 205 ). The silicon layer has a first width. A metal silicide stringer ( 202 ), having a second resistance different from the first resistance is deposited over a portion of the first silicon material ( 201 ) and having a second width that is less than the first width within at least a portion thereof. The metal silicide conducts current therethrough with approximately the second resistance and agglomerates in response to a programming current other than the conduct current therethrough with a same second resistance.