发明名称 REACTIVE SPUTTERING METHOD AND APPARATUS THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a reactive sputtering method and apparatus, with which a high-quality deposited film can be obtained extending over a deposition film forming plane. SOLUTION: In the reactive sputtering method, with which a target and a substrate are disposed inside a treatment container, and a reactant of sputtering particles and reaction gases fed into the treatment container is deposited on the substrate, in a space where the sputtering particles fly from the target onto the substrate, a partition is disposed, without being in contact with a deposition film formation plane of the substrate so as to substantially divide the deposition film forming plane of the substrate into a plurality of regions. The reaction gases of a flow rate corresponding to the deposition speed of the sputtering particles are fed, from a reactive gas feeding nozzle which is disposed toward each of the areas divided by the partition inside each of spaces surrounded with the partition, to the deposition film forming plane of the substrate installed in each of the regions divided by the partition. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006108504(A) 申请公布日期 2006.04.20
申请号 JP20040295202 申请日期 2004.10.07
申请人 CANON INC 发明人 TANIGUCHI TAKAHISA;AKIYAMA KAZUYOSHI
分类号 H01L21/314;C23C14/34;G03G5/08;H01L21/31 主分类号 H01L21/314
代理机构 代理人
主权项
地址