ZENER DIODE

摘要

PROBLEM TO BE SOLVED: To provide a zener diode capable of preventing breakdown voltage from time fluctuation. SOLUTION: In a zener diode 10, a p-type impurity region 32 and an n--type impurity region 11 form a pn junction, a p-type impurity region 32 forms an anode, an n+-type impurity region 34 forms a cathode, a wiring layer 39 forms an anode electrode, and a wiring layer 40 forms a cathode electrode. Furthermore, the trap level generated at the interfaceαis reduced since the n--type impurity region 11 controls the concentration of the electric field generated in the pn junction of respective regions 32 and 11 on the interfaceαbetween a silicon oxide 35 and the p-type impurity region 32 in the vicinity of the periphery of the n+-type impurity region 34 when the reverse voltage more than breakdown voltage is impressed between respective wiring layers 39 and 40. Thus, it is made possible to control the time fluctuation of the breakdown voltage caused by the trap level reduction. COPYRIGHT: (C)2006,JPO&NCIPI