| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, wherein the occurrence of a crystal defect such as dislocation is suppressed in a stress-generating region 4 occurring, in an active region 2 near an element isolation region 3 in the STI structure, and the source/drain can be formed without annealing, and to provide its manufacturing method. SOLUTION: In a mask formation process, a mask is formed at least above the stress-generating region 4 in a boundary between the element isolation region 3 and the active region 2. In a first ion implantation process, first ions 11 are implanted to form a first dopant region 12, which will serve as the source 8 and the drain 9 in the active region 2, other than the stress generating region 4. In a second ion implantation process, second ions 14 which have a larger mass than that of the first dopant ions 11 and have the same polarity as that of the first dopant ions 11 are implanted into the active region 2, including the stress-generating region 4 to form a second dopant region 15. COPYRIGHT: (C)2006,JPO&NCIPI
|
