Solid state imaging device and method for producing the same

摘要

On a light shielding film 7, an anti-oxidation layer 9 covering at least the light shielding film 7 is formed. The anti-oxidation layer 9 is formed under a condition which does not oxidize a surface of the light shielding film 7. The anti-oxidation layer 9 is formed of a high melting point metal compound film having a light shielding property or an insulating film having a light transmissive property. Thus, the scattering ratio of the incident light at the surface of the light shielding film 7 can be uniform among all the pixels, and as a result, a solid state imaging device having suppressed sensitivity non-uniformity can be realized. Since the surface of the light shielding film 7 is not oxidized, the thickness of the light shielding film 7 can be reduced. Thus, the present invention can comply with the demand for size reduction of the pixels.