发明名称 |
Methods of optimization of implant conditions to minimize channeling and structures formed thereby |
摘要 |
Methods of forming a microelectronic structure are described. Those methods comprise implanting a first concentration of a species into an active area with a first energy, wherein the species pre-damages a portion of the active area, and then implanting a second concentration of the species into the active area with a second energy, wherein the total concentration of the species does not substantially penetrate an underlying channel region.
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申请公布号 |
US2006084248(A1) |
申请公布日期 |
2006.04.20 |
申请号 |
US20040966200 |
申请日期 |
2004.10.15 |
申请人 |
RANADE PUSHKAR;LILAK AARON D;NATARAJAN SANJAY;ZIETZ GERARD T;MAIZ JOSE |
发明人 |
RANADE PUSHKAR;LILAK AARON D.;NATARAJAN SANJAY;ZIETZ GERARD T.;MAIZ JOSE |
分类号 |
H01L21/265 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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