发明名称 |
Semiconductor device having fin transistor and planar transistor and associated methods of manufacture |
摘要 |
Disclosed is a fin transistor and a planar transistor and a method of forming the same. The fin transistor and the planar transistor are formed to have gate electrodes with similar thicknesses by selectively recessing a semiconductor substrate in a planar region where the planar transistor is formed.
|
申请公布号 |
US2006081895(A1) |
申请公布日期 |
2006.04.20 |
申请号 |
US20050244136 |
申请日期 |
2005.10.06 |
申请人 |
LEE DEOK-HUYNG;SHIN YU-GYUN;LEE JONG-WOOK;KANG MIN-GU |
发明人 |
LEE DEOK-HUYNG;SHIN YU-GYUN;LEE JONG-WOOK;KANG MIN-GU |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|