发明名称 |
BIPOLAR-TRANSISTOR AND METHOD FOR THE PRODUCTION OF A BIPOLAR-TRANSISTOR |
摘要 |
The invention relates to NPN and PNP bipolar transistors and to a method for the production thereof, said transistors being characterised by a particularly high collector-emitter and collector-base blocking voltage. The blocking voltage is increased by a particular doping profile. An NPN bipolar transistor comprises a p-doped substrate (1), a trenched n-doped layer (3) forming the collector, a p-doped layer (7) which is arranged above the trenched n-doped layer and is made of a base and an n-doped layer which is arranged within the p-doped layer and forms an emitter of the transistor. A spatial charge area (RLZ 1) is formed between the p-doped layer and the trenched n-doped layer and a second spatial charge area (RLZ 2) is formed between the trenched n-doped layer and the p-doped substrate, which expands in the vertical direction on the collector when the transistor is operated with an increasing potential. The trenched n-doped layer comprises a doping profile in such a manner that when the transistor is operated with an increasing potential, the first and the second spatial charge area expand on the collector, transversing the entire depth of the trenched n-doped layer prior to the critical field strength for a breakthrough being reached between the collector and emitter. |
申请公布号 |
WO2005098960(A3) |
申请公布日期 |
2006.04.20 |
申请号 |
WO2005EP03129 |
申请日期 |
2005.03.24 |
申请人 |
PREMA SEMICONDUCTOR GMBH;GRUETZEDIEK, HARTMUT;RAMMENSEE, MICHAEL;SCHEERER, JOACHIM |
发明人 |
GRUETZEDIEK, HARTMUT;RAMMENSEE, MICHAEL;SCHEERER, JOACHIM |
分类号 |
H01L29/732;H01L21/331;H01L29/06;H01L29/08 |
主分类号 |
H01L29/732 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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