| 摘要 |
The invention relates to technical physics and can be used in instrument-making engineering for producing high- and superhigh- accuracy low-nose radiolelectrtonic components (resistors, capacitors, inductive coils, current-conducting lines, etc.) and in the other branches requiring the high- and superhigh- accuracy for controlling and measuring electrical parameters. The aim of said invention is to obtain materials exhibiting a low and ultralow physical characteristic scattering, a high mechanical and electrical strength and a long service life. The technical result is attained by the use of the inventive effect consisting of the disappearance of the scattering of a dielectric electrophysical characteristic when monofilms (monofibres) are combined in the form of a multilayer stack consisting of N elements, wherein N<1. The shape of the thin films or fibres (threads, multiwire) can be selected in a random manner. The combination in the form of a stack or beam simultaneously improves material structures and improves the strength characteristics thereof. Another unexpected effect discovered by the authors lies in the reduction of inherent noises of devices produced from said materials. The combination in the form of a multilayer stack makes it possible to improve any materials formed by monolayer (single) materials. |
