发明名称 |
Verfahren zur Reflexionsminderung von lichtempfindlichen Silicium-Planarhalbleiterbauelementen |
摘要 |
The refractive index of the reflection suppressing passivating film is related to the refractive index of silicon in normal atmosphere. The relation meets a specified equation, and the film thickness is related to a given wavelength. - The passivating film (6) consists of silicon nitride. Preferably the film thickness is approximately 1000 A for white light. The film application reduces the high silicon reflection capacity, caused by its very high refractive index of approximately. |
申请公布号 |
DE2022896(A1) |
申请公布日期 |
1971.11.25 |
申请号 |
DE19702022896 |
申请日期 |
1970.05.11 |
申请人 |
SIEMENS AG |
发明人 |
SCHMALHOFER,GERHARD,DIPL.-PHYS. |
分类号 |
H01L23/29;H01L31/0216 |
主分类号 |
H01L23/29 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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