| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which can obtain desired proper processing status. SOLUTION: A process which forms a gate structure 13 via a gate insulating film 12 on the main surface of a semiconductor substrate 11; a process which forms a first insulating film 14 which coats the upper surface and the side surface of the gate structure, and coats the main surface of the semiconductor substrate; a process which reforms the first insulating film which coats the upper surface of the gate structure and the main surface of the semiconductor substrate, by plasma treatment of anisotropy using gas which does not contain fluorine; and a process which eliminates the reformed first insulating film 15 are installed. COPYRIGHT: (C)2006,JPO&NCIPI
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