| 摘要 |
PROBLEM TO BE SOLVED: To provide a reverse blocking insulation gate-type semiconductor device capable of reducing high temperature leakage current and preventing reverse breakdown voltage from dropping lower than forward breakdown voltage, even in a low implantation reverse blocking insulation gate-type semiconductor layer improving a tradeoff relation between ON voltage characteristics and turn-OFF loss. SOLUTION: On the side of an internal first principal plane 3 surrounded by a both-face separating diffusion region 2 of an FZ-n silicon substrate 1; a p-base region 4, an n-emitter region 5 formed in the p-base region 4, a gate electrode 7 covered via a gate insulation film 6 on the surface of the p-base region 4 (channel region) sandwiched between the n-emitter region 5 and a first principal plane surface of a drift region 1 serving as an n-silicon substrate region, and an emitter electrode 9 coated across the p-emitter region 5 and the p-base region 4 for covering on the gate electrode via an interlayer insulation film 8, are provided. On the side of a second principal plane 10; a p-collector region 11 with less total impurities quantity than that of the p-base 4 of a parasitic pnp transistor, and a collector electrode formed on the surface of the p-collector region 11, are provided, thereby obtaining the reverse blocking insulation gate-type semiconductor device. COPYRIGHT: (C)2006,JPO&NCIPI
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