发明名称 FILM PATTERN FORMING METHOD AND SUBSTRATE MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a film pattern forming method with which a fine film pattern can be accurately and stably formed. SOLUTION: The film pattern forming method for forming a film pattern on a substrate includes the steps of disposing a liquid-repellent material on the substrate to form a liquid-repellent film; disposing a photocatalyst containing material on the liquid-repellent film to form a photocatalyst containing material film; decomposing a liquid-repellent area on the liquid-repellent film in contact with the photocatalyst containing material film, and modifying the area into a lyophilic area by irradiating the photocatalyst containing material film with energy beams, to form a pattern comprised of wet different portions; and removing the photocatalyst containing material film. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006108506(A) 申请公布日期 2006.04.20
申请号 JP20040295213 申请日期 2004.10.07
申请人 SEIKO EPSON CORP 发明人 TAKIGUCHI HIROSHI;TOYODA NAOYUKI
分类号 H05K3/10;H01L21/28;H01L21/288;H01L21/3205 主分类号 H05K3/10
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