| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor crystal, by which the semiconductor crystal can be efficiently manufactured. SOLUTION: In the method for manufacturing the semiconductor crystal by placing a seed crystal on the surface of one end of a pedestal disposed in the inside of a crucible made of a material having a melting point higher than 2,000°C and growing the semiconductor crystal on the surface of the seed crystal, the semiconductor crystal is grown under conditions that a gap is formed between the side wall of the pedestal and the inner wall of the crucible, and the temperature of the end surface of the pedestal on which the seed crystal is placed, is made higher than that of the end part of the pedestal on which the seed crystal is not placed. COPYRIGHT: (C)2006,JPO&NCIPI
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